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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
SFF40N30M SFF40N30Z
1/
DESIGNER'S DATA SHEET
Part Number / Ordering Information
SFF40N30 ___ ___ ___

Screening 2/
__ = Not Screened TX = TX Level TXV = TXV Level S = S Level
40 AMP , 300 Volts, 50 m Avalanche Rated N-channel MOSFET
Features:
* * * * * * * * Rugged poly-Si gate Lowest ON-resistance in the industry Avalanche rated Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit
Lead Option 3/
Package 3/ 4/
M = TO-254 Z = TO-254Z
__ = Straight Leads DB = Down Bend UB = Up Bend
Maximum Ratings Drain - Source Voltage Gate - Source Voltage Max. Continuous Drain Current (package limited) Max. Instantaneous Drain Current (Tj limited) Max. Avalanche current Single and Repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case)
NOTES: *Pulse Test: Pulse Width = 300sec, Duty Cycle = 2%. 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ For package outlines / lead bending options / pinout configurations - contact factory. 4/ Maximum current limited by package configuration 5/ Unless otherwise specified, all electrical characteristics @25C. TO-254 continuous transient
Symbol VDSS VGS ID1 ID2 ID3 IAR EAS EAR PD TOP & TSTG RJC
Value 300 20 30 40 40 35 40 1500 50 150 -55 to +150 1.0 (typ.0.75)
TO-254Z
Units V V A A A mJ W C C /W
@ TC = 25C @ TC = 25C @ TC = 125C @ L= 0.1 mH @ L= 0.1 mH @ TC = 25C
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00141H
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
SFF40N30M SFF40N30Z
Symbol
VGS = 0V, ID = 250A VGS = 10V, ID = 35A, Tj= 25C VGS = 10V, ID = 35A, Tj=125C VDS = VGS, ID = 1.0mA, Tj= 25C VDS = VGS, ID = 1.0mA, Tj= 125C VDS = VGS, ID = 1.0mA, Tj= -55C VGS = 20V, Tj= 25C VGS = 20V, Tj= 125C VDS = 300V, VGS = 0V, Tj = 25C VDS = 300V, VGS = 0V, Tj = 125C VDS = 10V, ID = 35A, Tj = 25C VGS = 10V VDS = 150V ID = 35A VGS = 10V VDS = 150V ID = 40A RG = 4.0, pw= 3us IF = 40A, VGS = 0V IF = 10A, di/dt = 100A/usec VGS = 0V VDS = 25V f = 1 MHz BVDSS RDS(on) VGS(th) IGSS IDSS gfs Qg Qgs Qgd td(on) tr td(off) tf VSD trr Qrr Ciss Coss Crss
Electrical Characteristics 5/
Drain to Source Breakdown Voltage Drain to Source On State Resistance Gate Threshold Voltage
Min
300 -- -- 2.5 1.5 -- -- -- -- -- 20 -- -- -- -- -- -- -- -- -- -- -- -- --
Typ
310 50 110 4.0 3.0 5.0 10 30 0.01 5.0 33 140 50 60 40 40 110 40 0.95 180 1.3 5000 750 145
Max
-- 60 -- 5.0 -- 6 100 -- 25 250 -- 250 -- -- 50 50 125 50 1.5 200 -- -- -- --
Units
V m V nA A A Mho nC
Gate to Source Leakage Zero Gate Voltage Drain Current Forward Transconductance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
nsec V nsec C pF
Available Part Numbers:
Consult Factory
PIN ASSIGNMENT (Standard) Package Drain Source Gate TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) Pin 1 Pin 2 Pin 3 TO254Z (Z)
TO254 (M)
PIN 3 PIN 2 PIN 1
PIN 3 PIN 2 PIN 1
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00141H
DOC

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